Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

ABSTRACT

A method of designing a semiconductor device includes preparing a standard cell layout including a layout out a preliminary pin pattern in at least one interconnection layout, performing a routing step to connect the preliminary pin pattern to a high-level interconnection layout, and generating a pin pattern in the interconnection layout, based on hitting information obtained at the completion of the routing step. The pin pattern is smaller than the preliminary pin pattern.

PRIORITY STATEMENT

This is a Continuation of U.S. application Ser. No. 15/184,227, filedJun. 16, 2016, in which a U.S. non-provisional patent application claimspriority under 35 U.S.C. § 119 to Korean Patent Applications No.10-2015-0108171 and No. 10-2015-0157565, filed on Jul. 30, 2015 and Nov.10, 2015, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated by reference.

BACKGROUND

The inventive concept relates to the interconnections, such as metallines and vias, of active elements a semiconductor device. Moreparticularly, the inventive concept relates to a method of designing alayout of a semiconductor device including field effect transistors andto a method of manufacturing a semiconductor device using the same.

Due to their small-sized, multifunctional, and/or low-costcharacteristics, semiconductor devices are esteemed in the electronicsindustry. Semiconductor devices may be classified as memory devices forstoring data, logic devices for processing data, or hybrid devicesincluding both of memory and logic elements. To meet an ever-increasingdemand for electronic devices which operate at high speeds and/orconsume low amounts of power, it is necessary to produce semiconductordevices that offer high performance and/or are multi-functional and yetremain highly reliable. To satisfy these technical requirements, thecomplexity and/or integration density of semiconductor devices is/arebeing increased.

SUMMARY

According to the inventive concept, there is provided a method ofproducing a layout of a semiconductor device, including providing astandard cell layout, the providing of the standard cell layoutcomprising creating a preliminary pin pattern of an interconnectionlayout of the standard cell layout, performing a routing step to producea high-level interconnection layout in which a the preliminary pinpattern is connected to a high-level interconnection pattern, andgenerating a postliminary pin pattern in a region of the interconnectionlayout of the standard cell layout, based on hitting informationobtained upon the completion of the routing step, and in which thepostliminary pin pattern is smaller than the preliminary pin pattern.

According to the inventive concept, there is also provided a method ofdesigning a layout of a semiconductor device may include providing afirst standard cell layout and a second standard cell layout in a celllibrary, the providing of the first and second standard cell layoutsincluding laying out a first preliminary pin pattern and a secondpreliminary pin pattern on the first and second standard cell layouts,respectively, laying out the first and second standard cell layouts,performing a routing step to connect the first and second preliminarypin patterns to high-level interconnection layouts, and generating afirst pin pattern and a second pin pattern using the first and secondpreliminary pin patterns, respectively, based on hitting information tobe obtained after the routing step. The first and second preliminary pinpatterns may be the same as each other in terms of size and arrangement,and the first and second pin patterns may be different from each otherin terms of size and arrangement.

According to the inventive concept, there is also provided a method offabricating a semiconductor device, including a process of generating alayout of a semiconductor device, the layout comprising a standard celllayout, manufacturing a photomask having a mask pattern based on thelayout of the semiconductor device, and forming layers of metal linesand vias on a substrate using the photomask, the vias verticallyconnecting different layers of the metal lines, and in which thegenerating of the layout of the semiconductor device comprises: layingout a lower via pattern on a logic layout of the standard cell layout,laying out a preliminary pin pattern on the lower via pattern,performing a routing step on the standard cell layout, which places ahigh-level interconnection layout and an upper via pattern on thepreliminary pin pattern, the upper via pattern connecting thepreliminary pin pattern to an element of the high-level interconnectionlayout, and generating a postliminary pin pattern connecting the lowervia pattern to the upper via pattern, wherein the postliminary pinpattern and the preliminary pin pattern occupy overlapping regions inthe process.

According to the inventive concept, there is also provided a method offabricating a semiconductor device, including a process of generating adevice layout of a semiconductor device, and manufacturing asemiconductor device using the device layout. The process of generatingthe device layout includes: acquiring a standard cell layout thatincludes a layout of active elements and/or regions of the semiconductordevice, and an interconnection layout including a preliminary pinpattern defining a region in the semiconductor device containing alocation of a lower via to be electrically connected to at least one ofthe active components and/or regions, performing a routing stepcomprising overlaying a high-level interconnection pattern and an uppervia pattern on the standard cell layout, wherein the high-levelinterconnection pattern intersects the preliminary pin pattern and isrepresentative of a high-level interconnection of the semiconductordevice, and the upper via pattern is placed at the intersection of thehigh-level interconnection pattern and the preliminary pin pattern andrepresents the location of an upper via of the semiconductor device,producing hitting information indicative of the location of the uppervia based on the routing step, and using the hitting information toproduce a postliminary pin pattern representative of a region in thesemiconductor device containing both the lower via and the upper via.The manufacturing of the semiconductor device comprises: forming activeelements and/or regions at an upper part of a substrate as laid outbased on the standard cell layout, forming layers of metal lines oneabove another on the substrate, and forming vias connecting the layersof metal lines to the active components, wherein the layers of metallines comprise a lower level metal layer including a lower level metalinterconnection corresponding to the postliminary pin pattern and anupper level metal layer including an upper level metal interconnectioncorresponding to the high-level interconnection, and the vias include afirst via corresponding to the lower via and interposed between andelectrically connecting the lower level metal interconnection to atleast one of the active components, and a second via corresponding tothe upper via and interposed between and electrically connecting thelower level and upper level metal interconnections.

BRIEF DESCRIPTION OF THE DRAWINGS

The inventive concept will be more clearly understood from the followingdetailed description of non-limiting examples thereof taken inconjunction with the accompanying drawings.

FIG. 1 is a block diagram illustrating a computer system for performinga semiconductor design process, according to some examples of theinventive concept.

FIG. 2 is a flow chart illustrating a method of designing andmanufacturing a semiconductor device, according to some examples of theinventive concept.

FIG. 3 is a flow chart illustrating some steps of the layout design ofFIG. 2.

FIGS. 4A, 4B, 5A, and 5B are plan views illustrating methods of layingout standard cells and establishing routing structures therefor, for usein explaining some advantages and benefits of methods according to theinventive concept.

FIGS. 6A, 6B and 6C are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept.

FIGS. 7A, 7B and 7C are sectional views, which are taken along linesI-I′, and respectively, of FIG. 6C to illustrate a semiconductor deviceaccording to some examples of the inventive concept.

FIGS. 8A, 8B and 8C are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept.

FIGS. 9A, 9C, and 9D are plan views illustrating a method of laying outa standard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept.

FIG. 9B is a plan view illustrating standard cell layouts whoseinterconnection layouts are different from each other.

FIGS. 10A, 10B and 10C are plan views illustrating a method of layingout a standard cell and establishing a routing structure therefor,according to some examples of the inventive concept.

FIGS. 11A and 11B are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain examples and to supplement the written description providedbelow. These drawings are not, however, to scale and may not preciselyreflect the precise structural or performance characteristics of anygiven example, and should not be interpreted as defining or limiting therange of values or properties encompassed by the inventive concept. Forexample, the relative thicknesses and positioning of molecules, layers,regions and/or structural elements may be reduced or exaggerated forclarity. The use of similar or identical reference numbers in thevarious drawings is intended to indicate the presence of a similar oridentical element or feature.

DETAILED DESCRIPTION

The inventive concepts will now be described more fully hereinafter withreference to the accompanying drawings, in which examples of theinventive concepts are shown. The inventive concept may, however, beembodied in different forms and should not be constructed as limited tothe examples set forth herein. Rather, these examples are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the inventive concept to those skilled in the art.

As used herein, the singular terms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be understood that when an element is referred to asbeing “connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element or intervening elements may bepresent.

Similarly, it will be understood that when an element such as a layer,region or substrate is referred to as being “on” another element, it canbe directly on the other element or intervening elements may be present.The same is true for similar terms such as “interposed between”. Incontrast, the term “directly” means that there are no interveningelements. Additionally, the example in the detailed description will bedescribed with sectional views as ideal exemplary views of the inventiveconcepts. Accordingly, shapes of the exemplary views may be modifiedaccording to manufacturing techniques and/or allowable errors.Therefore, the examples of the inventive concepts are not limited to thespecific shapes illustrated in the exemplary views, but may includeother shapes that may be created according to manufacturing processes.

Other terminology used herein for the purpose of describing particularexamples or embodiments of the inventive concept is to be taken incontext. For example, the terms “comprises” or “comprising” when used inthis specification specifies the presence of stated features orprocesses or steps but does not preclude the presence or additionalfeatures or processes or steps. Other terms are to be taken in context.For example, the term “size” of a region or pattern will generally beunderstood from the context as referring to the area of the region orpattern as viewed in plan, i.e., it's footprint, and may refer to thelength of the region or pattern when comparing two regions or patternsof similar widths. The term “position” may refer to the relativelocation of, for example, a region or pattern in a layout. Further inthis respect, although at times terms such as “connecting” or “connectedto” may be used in describing a method of producing or designing alayout, it will be understood that these terms are being used to referto connections in a virtual sense seeing that the layout process doesnot entail any physical or electrical connecting of actual elementsand/or regions.

Aspects of the present inventive concepts explained and illustratedherein include their complementary counterparts. The same referencenumerals or the same reference designators denote the same elementsthroughout the drawings.

FIG. 1 is a block diagram illustrating a computer system for performingexamples of a semiconductor design process, according to the inventiveconcept. Referring to FIG. 1, a computer system may include a centralprocessing unit (CPU) 10, a working memory 30, an input-output device50, and a storage device 70. In some examples, the computer system maybe a customized system for performing a layout design process accordingto the inventive concept. Furthermore, the computer system may include acomputing system configured to execute various design and checksimulation programs.

The CPU 10 may be configured to run a variety of software, such asapplication programs, operating systems, and device drivers. Forexample, the CPU 10 may be configured to run an operating system (notshown) loaded onto the working memory 30. Furthermore, the CPU 10 may beconfigured to run various application programs on the operating system.For example, the CPU 10 may be configured to run a layout design tool 32loaded onto the working memory 30.

The operating system or application programs may be loaded in theworking memory 30. For example, when the computer system starts abooting operation, an OS image (not shown) stored in the storage device70 may be loaded onto the working memory 30 according to a bootingsequence. In the computer system, overall input/output operations may bemanaged by the operating system. Similarly, some application programs,which may be selected by a user or be provided for basic services, maybe loaded onto the working memory 30. According to some examples of theinventive concept, the layout design tool 32 prepared for a layoutdesign process may be loaded onto the working memory 30 from the storagedevice 70.

The layout design tool 32 may provide a function for changing biasingdata for specific layout patterns; for example, the layout design tool32 may be configured to allow the specific layout patterns to haveshapes and positions different from those defined by a design rule. Thelayout design tool 32 may be configured to perform a design rule check(DRC) under the changed condition of the biasing data. The workingmemory 30 may comprise a volatile memory device (e.g., a static randomaccess memory (SRAM) or dynamic random access memory (DRAM) device) ornonvolatile memory device (e.g., a PRAM, MRAM, ReRAM, FRAM, or NOR FLASHmemory device).

In addition, a simulation tool 34 may be loaded onto the working memory30 to perform an optical proximity correction (OPC) operation on thedesigned layout data.

The input-output device 50 may be configured to control user input andoutput operations of user interface devices. For example, theinput-output device 50 may include a keyboard or a monitor, allowing adesigner to input relevant information. By using the input-output device50, the designer may receive information on several regions or datapaths, to which adjusted operating characteristics will be applied, of asemiconductor device. The input-output device 50 may be configured todisplay a progress status or a process result of the simulation tool 34.

The storage device 70 may serve as a storage medium for the computersystem. The storage device 70 may be configured to store applicationprograms, an OS image, and various data. The storage device 70 maycomprise a memory card (e.g., an MMC, eMMC, SD, MicroSD, or the like) ora hard disk drive (HDD). The storage device 70 may include a NAND FLASHmemory device with a large memory capacity. Alternatively, the storagedevice 70 may include at least one next-generation nonvolatile memorydevice (e.g., a PRAM, MRAM, ReRAM, or FRAM) or NOR FLASH memory device.

A system interconnector 90 may serve as a system bus for allowing anetwork to be created in the computer system. The CPU 10, the workingmemory 30, the input-output device 50, and the storage device 70 may beelectrically connected to each other through the system interconnector90, and thus, data may be exchanged therebetween. However, the systeminterconnector 90 may not be limited to consisting of merely a bus;rather, it may include an additional element for increasing efficiencyin data communication.

FIG. 2 is a flow chart illustrating a method of designing andmanufacturing a semiconductor device, according to some examples of theinventive concept.

Referring to FIG. 2, a high-level design process for a semiconductorintegrated circuit may be performed using the computer system describedwith reference to FIG. 1 (S110). For example, in the high-level designprocess, an integrated circuit to be designed may be described in termsof high-level computer language (e.g., C language). Circuits designed bythe high-level design process may be more concretely described by aregister transfer level (RTL) coding or a simulation. Furthermore, codesgenerated by the RTL coding may be converted into a netlist, and theresults may be combined with each other to produce a schematic of all ofthe circuitry of a semiconductor device. The (operability orpracticality of the semiconductor device represented by the) schematicmay be verified by a simulation tool. In certain examples, an adjustingstep may be further performed, in consideration of a result of theverification step.

A layout design process may be performed to realize a logically completeform of the semiconductor integrated circuit on a silicon wafer (S120).For example, the layout design process may be performed, based on theschematic circuit prepared in the high-level design process or thecorresponding netlist. The layout design process may include a routingstep of laying out and connecting various standard cells that areprovided from a cell library, based on a predetermined design rule. Inthe layout design process according to some examples of the inventiveconcept, pin patterns may be formed in each of the standard cells, basedon hitting information obtained after the routing step.

The cell library may contain information on operation, speed, and powerconsumption of cells. In certain examples, a cell library ofrepresentations of a layout of a circuit in a gate level may be providedin or defined by the layout design tool. Here, the layout may beprepared to define or describe shapes, positions, or dimensions ofpatterns constituting transistors and metal lines, which will actuallybe formed on a silicon wafer. For example, in order to actually form aninverter circuit on a silicon wafer, it may be necessary to prepare ordraw a layout of certain patterns (e.g., those of a PMOS, NMOS, N-WELL,gate electrodes, and metal lines thereon). For this, at least one ofinverters in the cell library may be selected. Thereafter, a routingstep of connecting the selected cells to each other may be performed.These steps may be automatically or manually performed in the layoutdesign tool. In certain examples, a step of laying out the standardcells and establishing routing structures thereto may be automaticallyperformed by a Place & Routing tool.

After the routing step, a verification step may be performed on thelayout to check whether any portion of the schematic circuit violatesthe given design rule. In some examples, the verification step mayinclude evaluating verification items, such as a design rule check(DRC), an electrical rule check (ERC), and a layout vs. schematic (LVS).The evaluating of the DRC item may be performed to evaluate whether thelayout meets the given design rule. The evaluating of the ERC item maybe performed to evaluate whether there is an issue of electricaldisconnection in the layout. The evaluating of the LVS item may beperformed to evaluate whether the layout is prepared to coincide withthe gate-level netlist.

An optical proximity correction (OPC) step may be performed (S130). TheOPC step may be performed to correct optical proximity effects, whichmay occur when a photolithography process is performed on a siliconwafer using a photomask manufactured based on the layout. The opticalproximity effect may be an unintended optical effect (such as refractionor diffraction) which may occur in the exposure process using thephotomask manufactured based on the layout. In the OPC step, the layoutmay be modified to have a reduced difference in shape between designedpatterns and actually-formed patterns, which difference would otherwisebe caused by the optical proximity effects. As a result of the opticalproximity correction step, the designed shapes and positions of thelayout patterns may be slightly changed.

A photomask may be manufactured, based on the layout modified by the OPCstep (S140). In general, the photomask may be manufactured by patterninga chromium layer provided on a glass substrate, using the layout patterndata.

The photomask may be used to manufacture a semiconductor device (S150).In the actual manufacturing process, the exposure and etching steps maybe repeatedly performed, and thus, patterns defined in the layout designprocess may be sequentially formed on a semiconductor substrate.

FIG. 3 is a flow chart illustrating some steps of the layout designprocess of the method of FIG. 2. FIGS. 4A, 4B, 5A, and 5B are plan viewsillustrating a method of laying out a standard cell and establishing arouting structure therefor.

Referring to FIGS. 3 and 4A, an original standard cell layout may beprovided using a layout design tool (S121). The standard cell layout mayinclude a logic layout representative of a layout of logic transistorsand an interconnection layout. For example, the interconnection layoutof FIG. 4A may correspond to a first metal layer to be provided on asemiconductor substrate.

In more detail, the providing of the logic layout may include providinga layout of active regions. The active regions may include a PMOSFETregion PR and an NMOSFET region NR. The PMOSFET region PR and theNMOSFET region NR may be spaced apart from each other in a firstdirection D1.

The providing of the logic layout may also include providing a layout ofgate patterns GP crossing the PMOSFET region PR and the NMOSFET regionNR and extending in the first direction D1. The gate patterns GP may bespaced apart from each other in the second direction D2 crossing thefirst direction D1. The PMOSFET region PR, the NMOSFET region NR, andthe gate patterns GP may constitute the logic transistors to be providedon the semiconductor substrate.

The providing of the interconnection layout may include providing firstand second power patterns PL1 and PL2 and first and second pin patternsM11 and M12. Each of the first and second power patterns PL1 and PL2 maybe a line-shaped pattern extending parallel to the second direction D2,and each of the first and second pin patterns M11 and M12 may be aline-shaped pattern extending parallel to the first direction D1. Thefirst and second pin patterns M11 and M12 may be spaced apart from eachother in the second direction D2.

Each of the first and second pin patterns M11 and M12 may include pinregions PI for routing with a high-level interconnection layout, whichwill be described below. For example, each of the first and second pinpatterns M11 and M12 may include five pin regions PI.

The standard cell layout may be saved in the cell library described withreference to FIG. 2. Next, multiple ones of the standard cell layoutsaved in the cell library may be set in place (S122). Although a singlestandard cell layout is illustrated in FIG. 4A, a plurality of standardcell layouts may be set in place as aligned with each other in thesecond direction D2 (e.g., see FIG. 11A).

Referring to FIGS. 3 and 4B, a routing step may be performed on thestandard cell layout to connect the standard cell to the high-levelinterconnection layout (S123). Firstly, the high-level interconnectionlayout may be provided. The high-level interconnection layout maycorrespond to a second metal layer to be formed on the semiconductorsubstrate. In certain examples, although not shown, the high-levelinterconnection layout may correspond to a plurality of metal layersthat will be sequentially stacked on the semiconductor substrate.

The providing of the high-level interconnection layout may includelaying out first and second interconnection patterns M21 and M22 andlaying out first and second upper via patterns V21 and V22. The firstand second interconnection patterns M21 and M22 may be automatically setin place in consideration of their connection to other standard celllayouts, and in certain examples, this step may be performed using thelayout design tool and/or the Place & Routing tool. Each of the firstand second interconnection patterns M21 and M22 may be a line-shapedpattern extending parallel to the second direction D2.

The laying out of the first and second upper via patterns V21 and V22may be performed at the same time as or after the first and secondinterconnection patterns M21 and M22 are laid out. The first upper viapattern V21 may be provided on one of the pin regions PI of the firstpin pattern M11 overlapped with the first interconnection pattern M21.The second upper via pattern V22 may be provided on one of the pinregions PI of the second pin pattern M12 overlapped with the secondinterconnection pattern M22. In other words, the interconnection layoutof the standard cell layout may be connected to the interconnectionpatterns of the high-level interconnection layout through the first andsecond upper via patterns V21 and V22.

Since the routing of the standard cell layout described with referenceto FIGS. 4A and 4B is performed using the first and second pin patternsM11 and M12, each of which includes the plurality of pin regions PI, itis possible to increase a degree of freedom in the routing step. Forexample, regardless of its position, each of the first and secondinterconnection patterns M21 and M22 may be overlapped with at least oneof the pin regions PI, and thus, each of the first and secondinterconnection patterns M21 and M22 may be easily connected to thefirst and second pin patterns M11 and M12. The routing for a standardcell layout, in which pin patterns with other shapes are provided, willbe described in below.

Referring to FIGS. 3 and 5A, in a different example, an originalstandard cell layout may be provided using the layout design tool (inS121). In more detail, an interconnection layout may be provided, andthe providing of the interconnection layout may include laying out thefirst and second power patterns PL1 and PL2 and laying out the first andsecond pin patterns M11 and M12. In this example, each of the first andsecond pin patterns M11 and M12 may have two pin regions PI, unlike thatdescribed with reference to FIGS. 4A and 4B. In other words, each of thefirst and second pin patterns M11 and M12 may be smaller than thatdescribed with reference to FIGS. 4A and 4B. Next, multiple ones of thestandard cell layout saved in the cell library may be set in placerelative to each other (S122).

Referring to FIGS. 3 and 5B, a routing step may be performed on thestandard cell layout to connect the standard cell to the high-levelinterconnection layout (S123). The providing of the high-levelinterconnection layout may include laying out the first interconnectionpattern M21 and laying out the first upper via pattern V21. Unlike thatdescribed with reference to FIG. 4B, the second interconnection patternM22 is not be provided. This is because the relatively small size of thesecond pin pattern M12 may make it difficult to overlap the second pinpattern M12 with the second interconnection pattern M22 andconsequently, in connecting the second pin pattern M12 to the secondinterconnection pattern M22.

The routing of the standard cell layout described with reference toFIGS. 5A and 5B has a lower degree of freedom, compared with that shownin and described with reference to FIGS. 4A and 4B. This is because thefirst and second pin patterns M11 and M12 are smaller than those shownin and described FIGS. 4A and 4B.

Because the first and second pin patterns M11 and M12 are relativelysmall, though, they may have low parasitic capacitance, and this makesit possible to realize a semiconductor device that has high operationspeed and low power consumption characteristics. By contrast, therelatively large first and second pin patterns M11 and M12 describedwith reference to FIGS. 4A and 4B have high parasitic capacitance, andthis is an impediment to increasing the operation speed and reducing thepower consumption of a semiconductor device.

FIGS. 6A to 6C are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept. In the following description,an element or step previously described with reference to FIGS. 4A, 4B,5A, and 5B may be identified by a similar or identical reference numberso as to avoid the necessity of duplicating a description thereof.

Referring to FIGS. 3 and 6A, an original standard cell layout may beprovided using the layout design tool (S121). In more detail, aninterconnection layout may be provided, and the providing of theinterconnection layout may include laying out the first and second powerpatterns PL1 and PL2 and laying out first and second preliminary pinpatterns PM11 and PM12. Furthermore, the providing of theinterconnection layout may include laying out first and second lower viapatterns V11 and V12 for connecting the logic layout to the first andsecond preliminary pin patterns PM11 and PM12, respectively.

Each of the first and second preliminary pin patterns PM11 and PM12 mayinclude a first ghost pattern MA1 and a second ghost pattern MA2. Thefirst and second ghost patterns MA1 and MA2 may be used to definepositions of pin patterns, which will be established in a subsequentstep; that is, the first and second ghost patterns MA1 and MA2 may serveas markers.

The first and second ghost patterns MA1 and MA2 may be in direct contactwith each other and may constitute the preliminary pin patterns PM11 andPM12. The first and second ghost patterns MA1 and MA2 may be differentfrom, or equal to, each other in terms of size. In some examples, thefirst ghost pattern MA1 may be smaller than the second ghost patternMA2. Here, the first ghost pattern MA1 may have a process margin or aminimum feature size that is determined by technical limitations insubsequent photolithography and etching processes.

The standard cell layout may be saved in the cell library described withreference to FIG. 2. Next, multiple ones of the standard cell layoutsaved in the cell library may be set in place (S122). Although a singlestandard cell layout is illustrated in FIG. 6A, a plurality of standardcell layouts may be set in place as aligned in the second direction D2and parallel to each other (e.g., see FIG. 11A).

Referring to FIGS. 3 and 6B, a routing step may be performed on thestandard cell layout to connect the standard cell to the high-levelinterconnection layout (S123). The providing of the high-levelinterconnection layout may include laying out the first and secondinterconnection patterns M21 and M22 and laying out the first and secondupper via patterns V21 and V22. The first and second interconnectionpatterns M21 and M22 and the first and second upper via patterns V21 andV22 may be automatically laid out in consideration of theinterconnection between them and another standard cell layout.

Each of the first and second upper via patterns V21 and V22 may beplaced on a corresponding one of overlapping regions of the first andsecond preliminary pin patterns PM11 and PM12 and the first and secondinterconnection patterns M21 and M22, respectively. In more detail, thefirst upper via pattern V21 may be placed on the second ghost patternMA2 of the first preliminary pin pattern PM11, and the second upper viapattern V22 may be placed on the first ghost pattern MA1 of the secondpreliminary pin pattern PM12. Positions of the first and second uppervia patterns V21 and V22 may be contained in hitting informationgenerated at the completion of the routing step.

Referring to FIGS. 3 and 6C, the first and second pin patterns M11 andM12 may be provided or generated in the interconnection layout, based onthe hitting information (in S124). In more detail, the second ghostpattern MA2 of the first preliminary pin pattern PM11 may be convertedinto the first pin pattern M11, and the first ghost pattern MA1 of thesecond preliminary pin pattern PM12 may be converted into the second pinpattern M12. In other words, one of the ghost patterns MA1 and MA2 maybe converted into the pin pattern, and the other of the ghost patternsMA1 and MA2 may be removed.

The first and second lower via patterns V11 and V12 may be connected tothe first and second upper via patterns V21 and V22, respectively,through the first and second pin patterns M11 and M12. In other words,the first and second pin patterns M11 and M12 may allow an input oroutput signal to be applied to the logic layout therethrough.

Although not shown, in another example according to the inventiveconcept, the second lower via pattern V12 is placed below the secondghost pattern MA2 of the second preliminary pin pattern PM12, and bothof the first and second ghost patterns MA1 and MA2 are converted intothe second pin pattern M12 so as to connect the second lower via patternV12 to the second upper via pattern V22.

According to the above-described routing of the standard cell layout, itis possible to maximize the degree of freedom in the routing step, asdescribed with reference to FIGS. 4A and 4B, and to minimize the size ofthe pin pattern, as described with reference to FIGS. 5A and 5B. Thismay make it possible to improve performance and power consumptioncharacteristics of a semiconductor device.

FIGS. 7A to 7C illustrate a semiconductor device manufactured accordingto the inventive concept. For example, the standard cell layoutpreviously described with reference to FIG. 6C may be used to fabricatesemiconductor devices, and FIGS. 7A to 7C illustrate an example of sucha semiconductor device.

In the following description of FIGS. 7A to 7C, elements correspondingto those of the above-described standard cell layout will be designatedby the same numerals. However, such elements constituting asemiconductor device may be formed on a semiconductor substrate using aphotolithography process, and thus, they may not be identical tocorresponding patterns constituting the standard cell layout. In someexamples, the semiconductor device is provided in the form of asystem-on-chip.

Referring to FIGS. 6C and 7A to 7C, second device isolation layers ST2may be provided on a substrate 100 to define PMOSFET and NMOSFET regionsPR and NR. The second device isolation layers ST2 may be formed in a topportion of the substrate 100. The substrate 100 may be a siliconsubstrate, a germanium substrate, or a silicon-on-insulator (SOI)substrate.

The PMOSFET and NMOSFET regions PR and NR may be spaced apart from eachother, in the first direction D1 parallel to a top surface of thesubstrate 100, by the second device isolation layers ST2 interposedtherebetween. In some examples, each of the PMOSFET and NMOSFET regionsPR and NR is a single (contiguous) region, but each of the PMOSFET andNMOSFET regions PR and NR may instead include a plurality of regionsspaced apart from each other by the second device isolation layers ST2.

A plurality of active patterns FN may be provided at the upper part ofthe PMOSFET and NMOSFET regions PR and NR as extending linearly in thesecond direction D2 crossing the first direction D1. The active patternsFN may be parts of or patterns protruding from the substrate 100. Theactive patterns FN may be spaced from each other along the firstdirection D1. First device isolation layers ST1 may be provided at bothsides of each of the active patterns FN as extending in the seconddirection D2. In some examples, each of the active patterns FN has afin-shaped portion at an uppermost part thereof. As an example, thefin-shaped portion may be that part of the pattern FN protruding in anupward direction above the level of the first device isolation layersST1.

The first and second device isolation layers ST1 and ST2 may beconnected to each other in a substantially continuous manner, therebyforming a single insulating layer. In some examples, the second deviceisolation layers ST2 may have a thickness greater than that of the firstdevice isolation layers ST1. In this case, the first device isolationlayers ST1 may be formed by a process different from that for the seconddevice isolation layers ST2. In certain examples, the first deviceisolation layers ST1 may be simultaneously formed using the same processas that for the second device isolation layers ST2, thereby havingsubstantially the same thickness as that of the second device isolationlayers ST2. The first and second device isolation layers ST1 and ST2 maybe formed in the upper portion of the substrate 100. The first andsecond device isolation layers ST1 and ST2 may be constituted by, forexample, a silicon oxide layer.

Gate patterns GP may be provided on the active patterns FN as extendingacross the active patterns FN in the first direction D1 and parallel toeach other. The gate patterns GP may be spaced apart from each other inthe second direction D2. More specifically, each of the gate patterns GPmay extend parallel to the first direction D1 across the PMOSFET regionPR, the second device isolation layers ST2, and the NMOSFET region NR.

A gate insulating pattern GI may be provided below each of the gatepatterns GP, and gate spacers GS may be provided at both sides of eachof the gate patterns GP. Furthermore, a capping pattern CP may beprovided to cover a top surface of each of the gate patterns GP.However, in certain examples, the capping pattern CP may be removed froma portion of the top surface of the gate pattern GP connected to a gatecontact CB. First to fifth interlayer insulating layers 110-150 may beprovided to cover the gate patterns GP.

The gate patterns GP may be formed of or include at least one materialselected from the group consisting of doped semiconductors, metals, andconductive metal nitrides. The gate insulating pattern GI may include atleast one of a silicon oxide layer, a silicon oxynitride layer, and ahigh-k dielectric layer whose dielectric constant is higher than that ofa silicon oxide layer. Each of the capping pattern CP and the gatespacers GS may include at least one of a silicon oxide layer, a siliconnitride layer, and a silicon oxynitride layer. Each of the first tofifth interlayer insulating layers 110-150 may be a silicon oxide layeror a silicon oxynitride layer.

Source/drain regions SD may be provided in portions of the activepatterns FN positioned at both sides of each of the gate patterns GP.The source/drain regions SD in the PMOSFET region PR may be p-typeimpurity regions, and the source/drain regions SD in the NMOSFET regionNR may be n-type impurity regions. The fin-shaped portions, which arepositioned below and overlapped by the gate patterns GP, may serve aschannel regions AF of transistors.

The source/drain regions SD may be epitaxial patterns formed by aselective epitaxial growth process. Accordingly, the source/drainregions SD may have top surfaces positioned at a higher level than thoseof the fin-shaped portions. The source/drain regions SD may include asemiconductor element different from those of the substrate 100. As anexample, the source/drain regions SD may be formed of or include asemiconductor material having a lattice constant different from (forexample, greater or smaller than) the substrate 100. Accordingly, thesource/drain regions SD may exert a compressive stress or a tensilestress on the channel regions AF.

The gate patterns GP and the active patterns FN may constitute aplurality of logic transistors. For example, they may correspond to thelogic layout described with reference to FIG. 6A.

Source/drain contacts CA may be provided between the gate patterns GP.The source/drain contacts CA may be arranged along the active patternsFN and in the second direction D2. As an example, the source/draincontacts CA may be respectively provided between the gate patterns GP onthe PMOSFET and NMOSFET regions PR and NR and may be arranged in thefirst direction D1 (e.g., see FIG. 7C). The source/drain contacts CA maybe directly coupled to and electrically connected to the source/drainregions SD. The source/drain contacts CA may be provided in the firstinterlayer insulating layer 110. The gate contact CB may be provided onat least one of the gate patterns GP.

First and second lower vias V11 and V12 may be provided on the firstinterlayer insulating layer 110 and in the second interlayer insulatinglayer 120. A first metal layer may be provided on the second interlayerinsulating layer 120 and in the third interlayer insulating layer 130.The first metal layer may include first and second power lines PL1 andPL2 and first and second lower metal lines M11 and M12. The first andsecond power lines PL1 and PL2 may correspond to the first and secondpower patterns PL1 and PL2 described with reference to FIG. 6C, and thefirst and second lower metal lines M11 and M12 may correspond to thefirst and second pin patterns M11 and M12 described with reference toFIG. 6C.

As an example, the first lower metal line M11 may be electricallyconnected to one of the source/drain contacts CA through the first lowervia V11. The second lower metal line M12 may be electrically connectedto the gate contact CB through the second lower via V12.

The first and second power lines PL1 and PL2 may be provided outside andadjacent to the PMOSFET and NMOSFET regions PR and NR, respectively. Thefirst power line PL1 may be connected to the source/drain contact CAthrough a lower via to allow a drain voltage (Vdd) (e.g., a powervoltage) to be applied to the PMOSFET region PR. The second power linePL2 may be connected to the source/drain contact CA through the lowervia to allow a source voltage (Vss) (e.g., a ground voltage) to beapplied to the NMOSFET region NR.

First and second upper vias V21 and V22 may be provided on the thirdinterlayer insulating layer 130 and in the fourth interlayer insulatinglayer 140. A second metal layer may be provided on the fourth interlayerinsulating layer 140 and in the fifth interlayer insulating layer 150.The second metal layer may include first and second upper metal linesM21 and M22. The first and second upper metal lines M21 and M22 maycorrespond to the first and second interconnection patterns M21 and M22described with reference to FIG. 6C.

As an example, the first upper metal line M21 may be electricallyconnected to the first lower metal line M11 through the first upper viaV21. The second upper metal line M22 may be electrically connected tothe second lower metal line M12 through the second upper via V22.

The first and second metal layers may be formed using a method ofdesigning and fabricating a semiconductor device as described withreference to FIG. 2. For example, a high-level design process and alayout design process for a semiconductor integrated circuit may beperformed to prepare the standard cell layout described with referenceto FIG. 6C. Subsequently, an optical proximity correction may beperformed to prepare modified metal layouts, and photomasks may bemanufactured, based on the modified metal layouts.

The formation of the first metal layer may include forming a photoresistpattern, whose pattern is defined by the interconnection layout, on thethird interlayer insulating layer 130. For example, a photoresist layermay be formed on the third interlayer insulating layer 130. Next, anexposure process may be performed on the photoresist layer using aphotomask, which is manufactured based on the interconnection layout,and then a development process may be performed on the photoresist layerto form the photoresist pattern. In some examples, the photoresistpattern may be formed to have openings defining metal line holes.

Next, the third interlayer insulating layer 130 may be etched using thephotoresist pattern as an etch mask, thereby forming interconnectionholes. The first and second power lines PL1 and PL2 and the first andsecond lower metal lines M11 and M12 may be formed by filling theinterconnection holes with conductive material. The conductive materialmay be formed of or include a metallic material (e.g., copper).

The second metal layer may be formed by a method similar to that forforming the first metal layer.

FIGS. 8A to 8C are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept. In the following descriptionof the present example, an element or step previously described withreference to FIGS. 6A to 6C may be designated by a similar or identicalreference number to avoid the necessity of duplicating a detaileddescription thereof.

Referring to FIGS. 3 and 8A, an original standard cell layout may beprepared using the layout design tool (S121). In more detail, aninterconnection layout may be provided, and the providing of theinterconnection layout may include laying out the first and second powerpatterns PL1 and PL2, laying out the first and second preliminary pinpatterns PM11 and PM12, and laying out the first and second lower viapatterns V11 and V12. Each of the first and second preliminary pinpatterns PM11 and PM12 may be substantially the same as a correspondingone of the first and second pin patterns M11 and M12 described withreference to FIG. 4A in terms of their shape and disposition.

The standard cell layout may be saved in the cell library described withreference to FIG. 2. Next, multiple ones of the standard cell layoutsaved in the cell library may be set in place (S122).

Referring to FIGS. 3 and 8B, a routing step may be performed on thestandard cell layout to connect the standard cell to the high-levelinterconnection layout (S123). The providing of the high-levelinterconnection layout may include laying out the first and secondinterconnection patterns M21 and M22 and laying out the first and secondupper via patterns V21 and V22.

Each of the first and second upper via patterns V21 and V22 may beplaced on a corresponding one of overlapping regions of the first andsecond preliminary pin patterns PM11 and PM12 and the first and secondinterconnection patterns M21 and M22, respectively. For example, thefirst upper via pattern V21 may be placed on a first region RG1 of thefirst preliminary pin pattern PM11. A region of the first region RG1, onwhich the first upper via pattern V21 is placed, may be designated afirst hitting region. The first lower via pattern V11 may be placedbelow the first region RG1. Another region of the first region RG1, onwhich the first lower via pattern V11 is placed, may be designated asecond hitting region. The first preliminary pin pattern PM11 may beplaced on a second region RG2 that does not overlap the first regionRG1.

Referring to FIGS. 3 and 8C, the first and second pin patterns M11 andM12 may be placed in the interconnection layout, based on hittinginformation that may be obtained at the completion of the routing step(S124). In more detail, the first preliminary pin pattern PM11 may beprocessed to preserve the first region RG1 including the first andsecond hitting regions but remove the second region RG2. The remainingportion (e.g., the first region RG1) of the first preliminary pinpattern PM11 may serve as the first pin pattern M11. The second pinpattern M12 may be formed by processing the second preliminary pinpattern PM12 in the same manner as that for the first preliminary pinpattern PM11.

FIGS. 9A, 9C, and 9D are plan views illustrating a method of laying outa standard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept. FIG. 9B is a plan viewillustrating some examples of standard cell layouts whoseinterconnection layouts are different from each other. In the followingdescription of the present example, an element or step previouslydescribed with reference to FIGS. 6A to 6C may be identified by asimilar or identical reference number so as to avoid the necessity ofduplicating the detailed description thereof.

Referring to FIGS. 3 and 9A, an original standard cell layout may beprovided using the layout design tool (in S121). In more detail, aninterconnection layout may be provided, and the providing of theinterconnection layout may include laying out the first and second powerpatterns PL1 and PL2, laying out the first and second preliminary pinpatterns PM11 and PM12, and laying out the first and second lower viapatterns V11 and V12. Each of the first and second preliminary pinpatterns PM11 and PM12 may be substantially the same as a correspondingone of the first and second pin patterns M11 and M12 described withreference to FIG. 4A in terms of their shape and disposition.

Referring to FIG. 9B, the original standard cell layout illustrated inFIG. 9A may be modified to produce first to fourth standard cell layoutsA, B, C, and D, whose interconnection layouts are different from eachother. For example, each of the standard cell layouts A, B, C, and Dillustrated in FIG. 9B may have the same logic layout as the originalstandard cell layout of FIG. 9A but may have an interconnection layoutdifferent from the original standard cell layout of FIG. 9A.

For example, each of the first to fourth standard cell layouts A, B, C,and D may include the first and second pin patterns M11 and M12. In thisexample, the first and second pin patterns M11 and M12 are differentfrom each other in terms of their sizes; that is, there may be adifference in the numbers of the pin regions PI provided in the firstand second pin patterns M11 and M12. In addition, the first and secondpin patterns M11 and M12 may be different from each other in terms oftheir relative positions.

Note, the first to fourth standard cell layouts A, B, C, and D are justexamples of possible modifications of the standard cell layout, i.e.,the standard cell layout may be modified, based on the numbers of thepin regions PI provided in the first and second preliminary pin patternsPM11 and PM12, to provide a different set of standard layouts. Forexample, in the case in which each of the first and second preliminarypin patterns PM11 and PM12 has five pin regions PI, the standard celllayout may be modified to produce a set of up to 5×5 (i.e., 25) standardcell layouts that are different from each other.

The original standard cell layout and the first to fourth standard celllayouts A, B, C, and D provided by the above process may be saved in thecell library described with reference to FIG. 2. Subsequently, multipleones of the original standard cell layouts saved in the cell library maybe set in place (S122).

Referring to FIGS. 3 and 9C, a routing step may be performed on theoriginal standard cell layout to connect the original standard celllayout to the high-level interconnection layout (in S123). The providingof the high-level interconnection layout may include laying out thefirst and second interconnection patterns M21 and M22 and laying out thefirst and second upper via patterns V21 and V22.

Each of the first and second upper via patterns V21 and V22 may beplaced on a corresponding one of overlapping regions of the first andsecond preliminary pin patterns PM11 and PM12 and the first and secondinterconnection patterns M21 and M22, respectively. Positions at whichthe first and second upper via patterns V21 and V22 will be provided mayconstitute a part of the hitting information.

For example, when viewed in the first direction D1, the first upper viapattern V21 may be provided in the third pin region of the firstpreliminary pin pattern PM11 and the second upper via pattern V22 may beprovided in the second pin region of the second preliminary pin patternPM12.

Referring to FIGS. 3 and 9D, the first and second pin patterns M11 andM12 may be placed in the interconnection layout, based on the hittinginformation (S124). In more detail, based on the hitting information,any original standard cell layout may be replaced with one of the firstto fourth standard cell layouts A, B, C, and D.

For example, an interconnection layout including three pin region of thefirst pin pattern M11 and two pin regions of the second pin pattern M12may be suitable for meeting the technical requirements imposed by thehitting information. In this case, referring to FIG. 9B, the second tofourth standard cell layouts B, C, and D are suitable to meet suchrequirements. However, among these second to fourth standard celllayouts B, C, and D the second standard cell layout B may be mostdesirable due to its smallest pin patterns M11 and M12 and because adevice made based on this layout will exhibit the lowest parasiticcapacitance among the devices made based on the second to fourthstandard cell layouts B, C, and D. Accordingly, the original standardcell layout may be replaced by the second standard cell layout B.

FIGS. 10A to 10C are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept. In the following descriptionof the present example, an element or step previously described withreference to FIGS. 6A to 6C may be identified by a similar or identicalreference number to avoid the necessity of duplicating a detaileddescription thereof.

Referring to FIGS. 3 and 10A, an original standard cell layout may beprovided using the layout design tool (S121). The providing of thestandard cell layout may include providing first and secondinterconnection layouts. In some examples, the first interconnectionlayout may correspond to a first metal layer to be formed on thesemiconductor substrate, and the second interconnection layout maycorrespond to a second metal layer to be formed on the semiconductorsubstrate. In other words, unlike the example illustrated in FIG. 6A,the standard cell layout may include a plurality of interconnectionlayouts, and the interconnection layouts may be changed depending on thetype of circuits constituting the standard cell layout.

The providing of the first interconnection layout may include laying outthe first and second power patterns PL1 and PL2 and laying out the firstto third lower interconnection line patterns M11, M12, and M13. Althoughnot shown, the first to third lower interconnection line patterns M11,M12, and M13 may be connected to the logic layout through the lower viapatterns.

The preparation of the second interconnection layout may include layingout the first to third preliminary pin patterns PM21, PM22, and PM23 andlaying out the first to third via patterns V21, V22, and V23. Each ofthe first to third via patterns V21, V22, and V23 may be disposedbetween a corresponding pair of the first to third lower interconnectionline patterns M11, M12, and M13 and the first to third preliminary pinpatterns PM21, PM22, and PM23 to connect the corresponding pair to eachother.

The standard cell layout may be saved in the cell library described withreference to FIG. 2. Next, multiple ones of the standard cell layoutssaved in the cell library may be set in place (S122).

Referring to FIGS. 3 and 10B, a routing step may be performed on thestandard cell layout to connect the standard cell to the high-levelinterconnection layout (S123). The providing of the high-levelinterconnection layout may include laying out the first to third upperinterconnection line patterns M31, M32, and M33 and laying out the firstto third upper via patterns V31, V32, and V33. Each of the first tothird upper via patterns V31, V32, and V33 may be placed on acorresponding one of overlapping regions of the first to thirdpreliminary pin patterns PM21, PM22, and PM23 and the first to thirdupper interconnection line patterns M31, M32, and M33, respectively. Atthe completion of the routing step, hitting information may be obtained.

Referring to FIGS. 3 and 10C, first to third pin patterns M21, M22, andM23 may be provided or generated in the second interconnection layout,based on the hitting information (S124). The formation of the first tothird pin patterns M21, M22, and M23 may be performed using one of themethods previously described with reference to FIGS. 6C, 8C, and 9D. Asa result, the size of each of the first to third pin patterns M21, M22,and M23 may be decreased, compared to that of a corresponding one of thefirst to third preliminary pin patterns PM21, PM22, and PM23.

Unlike the example shown in and described with reference to FIGS. 6A to6C and FIGS. 10A to 10C, the pin patterns of the standard cell layoutare not be limited to being provided in the first metal layer and/or thesecond metal layer (above the substrate). Rather, as described above,the pin patterns may be laid out in the high-level metal layer (e.g., athird metal layer). Furthermore, the pin patterns may be provided indifferent metal layers; for example, a plurality of pin patterns may belaid out in each of the first and second metal layers.

FIGS. 11A and 11B are plan views illustrating a method of laying out astandard cell and establishing a routing structure therefor, accordingto some examples of the inventive concept. In the following descriptionof the present example, an element or step previously described withreference to FIGS. 6A to 6C may be identified by a similar or identicalreference number so as to avoid the necessity of duplicating a detaileddescription thereof.

Referring to FIGS. 3 and 11A, the standard cell layout described withreference to FIG. 6A, 8A, or 9A may be provided (S121). The standardcell layout may be saved in the cell library described with reference toFIG. 2. Subsequently, multiple ones of the standard cell layout saved inthe cell library may be set in place as aligned in the second directionD2 and parallel to each other (S122). A plurality of the same standardcell layouts may be set in place to form a first standard cell layoutSTD1 and a second standard cell layout STD2 each including the samelogic layout with the same circuit. As an example, the first and secondstandard cell layouts STD1 and STD2 may represent an inverter. The firststandard cell layout STD1 may have a first interconnection layoutincluding the first and second preliminary pin patterns PM11 and PM12,and the second standard cell layout STD2 may have a secondinterconnection layout including third and fourth preliminary pinpatterns PM13 and PM14. The first and second preliminary pin patternsPM11 and PM12 and the third and fourth preliminary pin patterns PM13 andPM14 may be the same as each other in terms of their size and position.Although not illustrated, additional standard cell layouts may beadditionally interposed between the first and second standard celllayouts STD1 and STD2.

Referring to FIGS. 3 and 11B, a routing step may be performed on thefirst and second standard cell layouts STD1 and STD2 to connect thefirst and second standard cell layouts STD1 and STD2 to the high-levelinterconnection layout (S123). Although the first and second standardcell layouts STD1 and STD2 are the same, the first and second standardcell layouts STD1 and STD2 may be connected to standard cells differentfrom each other in the routing step, and thus, the first and secondstandard cell layouts STD1 and STD2 may have different hittinginformation associated therewith. As an example, the first standard celllayout STD1 may be connected to first and second interconnectionpatterns M21 and M22 constituting the high-level interconnection layout.The second standard cell layout STD2 may be connected to third andfourth interconnection patterns M23 and M24 constituting the high-levelinterconnection layout.

Based on the hitting information, the first and second pin patterns M11and M12 may be provided or generated in the first interconnection layoutand the third and fourth pin patterns M13 and M14 may be provided orgenerated in the second interconnection layout (in S124). The first andsecond pin patterns M11 and M12 and/or the third and fourth pin patternsM13 and M14 may be formed using one of the methods previously describedwith reference to FIGS. 6C, 8C, and 9D. Accordingly, it is possible toprovide the first and second pin patterns M11 and M12 and the third andfourth pin patterns M13 and M14, whose sizes and dispositions aredifferent from each other, in the same standard cell layouts (e.g., thefirst and second standard cell layouts STD1 and STD2).

On the contrary, if the pin patterns were newly generated after the stepof laying out the standard cell layout and establishing a routingstructure therefor (e.g., see FIG. 4B or FIG. 5B), the same standardcell layouts may have the same pin patterns (e.g., having the same sizeand the same arrangement), regardless of whether there is a differencein the routing step. By contrast, in the layout design method accordingto some examples of the inventive concept, although the standard celllayouts are the same, it is possible to realize pin patterns for thestandard cell layouts, respectively, that are different from each otherin terms of their size and relative position. This makes it possible torealize a semiconductor device with optimized characteristics.

According to some examples of the inventive concept, a method ofdesigning a layout of a semiconductor device may include laying out pinpatterns in an interconnection layout of a standard cell layout, basedon hitting information obtained after a routing step. Accordingly, it ispossible to maximize the degree of freedom in the routing and realize asemiconductor device with high operation speed and low power consumptioncharacteristics.

Finally, although examples of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madethereto without departing from the spirit and scope of the inventiveconcept as defined by the attached claims.

What is claimed is:
 1. A method of producing a layout of a semiconductordevice, comprising: providing a standard cell layout, the providing ofthe standard cell layout comprising creating a preliminary pin patternof an interconnection layout of the standard cell layout in associationwith a lower metal layer of the semiconductor device; performing arouting step to produce a high-level interconnection layout in which athe preliminary pin pattern is connected to a high-level interconnectionpattern, the high-level interconnection layout representative of anupper level metal interconnection of the semiconductor device disposedabove the lower metal layer; and converting the preliminary pin patterninto a postliminary pin pattern in a region of the interconnectionlayout of the standard cell layout, based on hitting informationobtained upon the completion of the routing step, the postliminary pinpattern representative of a lower level metal interconnection of thelower metal layer of the semiconductor device, wherein the postliminarypin pattern is different from the preliminary pin pattern.
 2. The methodof claim 1, wherein the postliminary pin pattern is different from thepreliminary pin pattern in terms of size and arrangement.
 3. The methodof claim 1, wherein the converting of the preliminary pin pattern intothe postliminary pin pattern places the postliminary pin pattern in aregion that was occupied by the preliminary pin pattern such that thepostliminary pin pattern and the preliminary pin pattern occupyoverlapping regions in the method of producing the layout.
 4. The methodof claim 1, wherein the providing of the standard cell layout comprises:providing a logic layout including logic transistors; and laying out alower via pattern to connect the logic layout to the preliminary pinpattern.
 5. The method of claim 1, wherein the laying out of thepreliminary pin pattern comprises laying out ghost patterns, in whichpin information for the routing step is contained, and the converting ofthe preliminary pin pattern into the postliminary pin pattern comprisesconverting one of the ghost patterns that hits the high-levelinterconnection layout into the postliminary pin pattern.
 6. The methodof claim 1, wherein the converting of the preliminary pin pattern intothe postliminary pin pattern comprises preserving a first region of thepreliminary pin pattern while removing a second region of thepreliminary pin pattern, and the first region comprises a first hittingregion to be connected to the high-level interconnection layout.
 7. Themethod of claim 1, further comprising providing a plurality of celllayouts, each based on the standard cell layout, wherein the celllayouts have different interconnection layouts from one another, and theconverting of the preliminary pin pattern into the postliminary pinpattern comprises replacing the standard cell layout with one of thecell layouts, based on the hitting information.
 8. The method of claim1, further comprises laying out multiple ones of the standard celllayout, before the routing step.
 9. A method of fabricating asemiconductor device, comprising: a process of generating a layout of asemiconductor device, the layout comprising a standard cell layout;manufacturing a photomask having a mask pattern based on the layout ofthe semiconductor device; and forming layers of metal lines and vias ona substrate using the photomask, the vias vertically connectingdifferent layers of the metal lines, wherein the generating of thelayout of the semiconductor device comprises: laying out a lower viapattern on a logic layout of the standard cell layout; laying out apreliminary pin pattern on the lower via pattern; performing a routingstep on the standard cell layout, which places a high-levelinterconnection layout and an upper via pattern on the preliminary pinpattern, the upper via pattern connecting the preliminary pin pattern toan element of the high-level interconnection layout; and generating apostliminary pin pattern connecting the lower via pattern to the uppervia pattern, wherein the postliminary pin pattern and the preliminarypin pattern occupy overlapping regions in the process.
 10. The method ofclaim 9, wherein the postliminary pin pattern is different from thepreliminary pin pattern in terms of size and arrangement.
 11. The methodof claim 9, wherein the laying out of the preliminary pin patterncomprises laying out a ghost pattern, in which pin information for therouting step is contained, and wherein the upper via pattern is placedon the ghost pattern in the routing step, and the generating of thepostliminary pin pattern comprises converting the ghost pattern into thepin pattern.
 12. The method of claim 9, wherein the generating of thepostliminary pin pattern comprises preserving a first region of thepreliminary pin pattern while removing a second region of thepreliminary pin pattern, and the first region comprises a regionoverlapped by the upper via pattern.
 13. The method of claim 12, whereinthe first region further comprises a region overlapping the lower viapattern.
 14. The method of claim 9, wherein the process of generating ofthe layout of the semiconductor device further comprises generating aplurality of cell layouts each based on the standard cell layout, andwherein each one of the cell layouts comprises pin patterns that aredifferent from those of each other of the cell layouts in terms of thesizes and arrangement of the pin patterns, and the generating of thepostliminary pin pattern comprises replacing the standard cell layoutwith one of the cell layouts in consideration of the location of theupper via pattern.
 15. A method of fabricating a semiconductor device,comprising: a process of generating a layout of a semiconductor device,the layout comprising a standard cell layout; manufacturing a photomaskhaving a mask pattern based on the layout of the semiconductor device;and forming layers of metal lines and vias on a substrate using thephotomask, the vias vertically connecting different layers of the metallines, wherein the generating of the layout of the semiconductor devicecomprises: laying out a lower via pattern on a logic layout of thestandard cell layout; laying out a preliminary pin pattern on the lowervia pattern; performing a routing step on the standard cell layout,which places a high-level interconnection layout and an upper viapattern on the preliminary pin pattern, the upper via pattern connectingthe preliminary pin pattern to an element of the high-levelinterconnection layout; and changing size of the preliminary pin patternto generate a postliminary pin pattern connecting the lower via patternto the upper via pattern.
 16. The method of claim 15, wherein the layingout of the preliminary pin pattern comprises laying out a ghost pattern,in which pin information for the routing step is contained, and whereinthe upper via pattern is placed on the ghost pattern in the routingstep, and the generating of the postliminary pin pattern comprisesconverting the ghost pattern into the pin pattern.
 17. The method ofclaim 15, wherein the generating of the postliminary pin patterncomprises preserving a first region of the preliminary pin pattern whileremoving a second region of the preliminary pin pattern, and the firstregion comprises a region overlapped by the upper via pattern.
 18. Themethod of claim 17, wherein the first region further comprises a regionoverlapping the lower via pattern.
 19. The method of claim 15, whereinthe process of generating of the layout of the semiconductor devicefurther comprises generating a plurality of cell layouts each based onthe standard cell layout, and wherein each one of the cell layoutscomprises pin patterns that are different from those of each other ofthe cell layouts in terms of the sizes and arrangement of the pinpatterns, and the generating of the postliminary pin pattern comprisesreplacing the standard cell layout with one of the cell layouts inconsideration of the location of the upper via pattern.